The strive to a more electric and an all-electric society leads to a stronger demand for higher efficiency, improved reliability and ruggedness of the utilized power electronics. Emerging SiC, GaN and the FETs made from them already unlock new designs with only the beginning of an accelerated development towards ever more efficient and better components.
New materials, heterogeneous integration or bi-directional switches are just some of the trends that will lead to ever new possibilities in power electronics.
The focus topic on emerging power electronic devices and semiconductors gives the visibility it needs and brings experts together to exchange new concepts, paving the way for the next steps toward the all-electric society.
LS6a - Topic 11: Focus Topic 5 - Emerging Power Electronics Devices and Semiconductors
Thursday 7 September - 10:00 - 11:00 - Plenary Room
0122 – Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area Masaki Takahashi, Zhongchao Sun, Jannick Kjær Jørgensen, Szymon Michal Beczkowski, Stig Munk-Nielsen, Asger Bjørn Jørgensen Aalborg university
0481 – Mitigating Inter-Chip Oscillation of paralleled SiC MOSFETs Florian Sawallich, Hans-Günter Eckel UNIVERSITY OF ROSTOCK
0108 – Minimization of parasitic capacitance for proper function of 3 level ANPC with GaN switches Qian Li, Günter Schröder University of Siegen
Industrial Forum:
Industrial Forum 5
Emerging Power Electronics Devices and Semiconductors
Thursday 7 September 2023: 16:30 – 17:40 Location: 1.01 Banen
Chairman: Kevin HERMANNS, PE Systems, Germany Co-Chairman: Subham SAHOO, Aalborg University, Energy Department, Denmark